{"id":198,"date":"2024-11-01T22:30:38","date_gmt":"2024-11-02T02:30:38","guid":{"rendered":"https:\/\/sites.nd.edu\/needslab\/?p=198"},"modified":"2026-01-31T17:55:15","modified_gmt":"2026-01-31T22:55:15","slug":"2024-ieee-iedm-results","status":"publish","type":"post","link":"https:\/\/sites.nd.edu\/needslab\/2024\/11\/01\/2024-ieee-iedm-results\/","title":{"rendered":"Four Papers Accepted at 2024 IEEE IEDM!"},"content":{"rendered":"\n<p class=\"wp-block-paragraph\">Congratulations! Four papers have been accepted at 2024 IEEE IEDM held at San Francisco!<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><strong>Paper 1: <\/strong><em>First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory<\/em> (Shan Deng)<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><strong>Paper 2: <\/strong><em>Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping<\/em> (Yixin Qin)<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><strong>Paper 3: <\/strong><em>Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET<\/em> (Jiahui Duan)<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><strong>Ppaer 4: <\/strong><em>On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency<\/em><\/p>\n\n\n\n<figure class=\"wp-block-image size-full is-resized\"><img loading=\"lazy\" decoding=\"async\" width=\"320\" height=\"158\" src=\"https:\/\/sites.nd.edu\/needslab\/files\/2024\/11\/images.png\" alt=\"\" class=\"wp-image-217\" style=\"width:435px;height:auto\" srcset=\"https:\/\/sites.nd.edu\/needslab\/files\/2024\/11\/images.png 320w, https:\/\/sites.nd.edu\/needslab\/files\/2024\/11\/images-300x148.png 300w\" sizes=\"auto, (max-width: 320px) 100vw, 320px\" \/><\/figure>\n\n\n\n<p class=\"wp-block-paragraph\"><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Congratulations! Four papers have been accepted at 2024 IEEE IEDM held at San Francisco! Paper 1: First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory (Shan Deng) Paper 2: Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions [&hellip;]<\/p>\n","protected":false},"author":4921,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[1],"tags":[],"class_list":["post-198","post","type-post","status-publish","format-standard","hentry","category-publications"],"_links":{"self":[{"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/posts\/198","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/users\/4921"}],"replies":[{"embeddable":true,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/comments?post=198"}],"version-history":[{"count":7,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/posts\/198\/revisions"}],"predecessor-version":[{"id":674,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/posts\/198\/revisions\/674"}],"wp:attachment":[{"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/media?parent=198"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/categories?post=198"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/sites.nd.edu\/needslab\/wp-json\/wp\/v2\/tags?post=198"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}