Congratulations! Four papers have been accepted at 2024 IEEE IEDM held at San Francisco!
First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory
Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping
Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET
On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency
