Congratulations! Four papers have been accepted at 2024 IEEE IEDM held at San Francisco!
Paper 1: First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory (Shan Deng)
Paper 2: Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping (Yixin Qin)
Paper 3: Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET (Jiahui Duan)
Ppaer 4: On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency
