Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)
NanoElectronic Devices and Systems (NEEDS)
College of Engineering
Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)