Congratulations to Shan Deng, John Howe, and Sizhe Ma! Our paper, “Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation”, has been accepted for presentation at the 2025 Symposium on VLSI Technology and Circuits (VLSI) in Kyoto, Japan.
