Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)
NanoElectronic Devices and Systems (NEEDS)
College of Engineering
Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)
Congratulations to John Howe, who is named 2025 Goldwater Scholarship Award.
The Goldwater Scholarship is one of the most prestigious awards in the U.S. for undergraduates pursuing careers in STEM research. Out of thousands of applicants nominated from their universities nationwide, only about 400 students are selected each year.
Congratulations to Shan Deng, who received a 6-month internship at Micron, Boise, ID.
Congratulations to Zijian Zhao, who received a 6-month internship at Applied Materials, San Jose, CA.