News

One Paper Accepted to 2025 DRC!

Congrations to our undergraduate John Howe‘s paper, titled “Engineering MSMFM Structure Composed of Compound Bi-Directional Selector and Ferroelectric Capacitor for High Density Capacitor Arrays“, was accepted to 2025 Device Research Conference (DRC)!

One Paper Accepted at 2025 VLSI Symposium

Congratulations to Shan Deng, John Howe, and Sizhe Ma! Our paper, “Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation”, has been accepted for presentation at the 2025 Symposium on VLSI Technology and Circuits (VLSI) in Kyoto, Japan.

2025 Goldwater Scholarship Award!

Congratulations to John Howe, who is named 2025 Goldwater Scholarship Award.

The Goldwater Scholarship is one of the most prestigious awards in the U.S. for undergraduates pursuing careers in STEM research. Out of thousands of applicants nominated from their universities nationwide, only about 400 students are selected each year.