Congratulations to Sizhe Ma, who received a summer internship at TEL, Albany, NY.
2026 Summer Internship at TEL!
News
Congratulations to YuShan’s Graduation!
We are thrilled to announce that YuShan have successfully completed her master study in 2025 winter! And She will join Marvell Techonology in California. Her hard work and contributions are invaluable to NEEDs group. We wish YuShan great success in future career!
One Paper and Two Posters Accepted at 2026 IEEE IRPS!
Paper 1: Unraveling Intricate Switching Dynamics of FeFETs with Gate Side Injection Towards Reliable Disturb-Immune 3D NAND Storage (Sizhe Ma)
Poster 1: BTI Reliability Enhancement of Ge-Doped In₂O₃ TFTs via Al₂O₃ Passivation (Xingtian Wang)
Poster 2: Investigation into Temperature Dependent 2T-nC FeRAM Readout Operation (Siyuan Li)
Four Papers Accepted at IEEE IEDM 2025!
Congratulations! Four papers have been accepted at 2025 IEEE IEDM held at San Francisco!
Paper 1: Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking (Jiahui Duan* & Shan Deng*)
Paper 2: Securing 3D NAND Without Density Loss via In-Situ Encryption Using a Single Transistor XOR Cell (Jiahui Duan)
Paper 3: Atomic Layer Deposited Amorphous Ge-Doped Indium Oxide with Enhanced Mobility–Stability–
Crystallization Resistance Tradeoff (YuShan Lee* & Xingtian Wang* & Jiahui Duan*)
Ppaer 4: Comprehensive Evaluation of Challenges in Realizing Disturb-Free Ferroelectric Vertical NAND
via String-Compatible Independent Pass Gates (Xuezhong Niu)
*: Co-first author at NEEDs group
Two Posters Accepted to 2025 SRC TECHCON!
Congratulations to Yushan Lee and John Howe‘s work which were accepted to 2025 Techcon in Austin, TX. And John has been selected to give Undergraduate Lightning Talks in Graduate Sessions. Looking forward to enjoying both presentaions!
One Paper Accepted to 2025 DRC!
Congrations to our undergraduate John Howe‘s paper, titled “Engineering MSMFM Structure Composed of Compound Bi-Directional Selector and Ferroelectric Capacitor for High Density Capacitor Arrays“, was accepted to 2025 Device Research Conference (DRC)!
2025 New Internship at Marvell!
Congratulations to YuShan Lee, who received a 4-month internship at Marvell, San Jose, CA.
One Paper Accepted at 2025 VLSI Symposium
Congratulations to Shan Deng, John Howe, and Sizhe Ma! Our paper, “Vertical 2T-nC FeRAM Demonstration: BEOL Read Transistor for 4F2 Memory Strings and Two-Terminal Selector Design for Polarization Disturb Mitigation”, has been accepted for presentation at the 2025 Symposium on VLSI Technology and Circuits (VLSI) in Kyoto, Japan.
Congratulations to Shan & Zijian’s Graduation!
We are thrilled to announce that Shan Deng and Zijian Zhao have successfully completed their PhD studies this summer! Shan will join Micron in Idaho and Zijian will join Sandisk in California. Their hard work and contributions are invaluable to NEEDs group. We wish them great success in their future careers, Dr. Deng and Dr. Zhao!
Two papers have been accepted at 2025 IEEE IRPS held at Monterey, CA!
Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)