Paper 1: Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side Injection (Sizhe Ma)
Paper 2: Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage (Yixin Qin)
News
2025 Goldwater Scholarship Award!
Congratulations to John Howe, who is named 2025 Goldwater Scholarship Award.
The Goldwater Scholarship is one of the most prestigious awards in the U.S. for undergraduates pursuing careers in STEM research. Out of thousands of applicants nominated from their universities nationwide, only about 400 students are selected each year.
2025 Internship at TEL & TSMC
Congratulations to Yixin Qin, who received a summer internship at TEL, Albany, NY.
Congratulations to John Howe, who received a summer internship at TSMC, Phoenix, AZ.
2024 Internship at Micron & Applied Materials!
Congratulations to Shan Deng, who received a 6-month internship at Micron, Boise, ID.
Congratulations to Zijian Zhao, who received a 6-month internship at Applied Materials, San Jose, CA.
SUPREME Undergraduate Microelectronics Fellow award
Congratulations to John Howe, junior student at NEEDs, who got the SUPREME Undergraduate Microelectronics Fellow!
Four papers have been accepted at 2024 IEEE IEDM!
Congratulations! Four papers have been accepted at 2024 IEEE IEDM held at San Francisco!
Paper 1: First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3D Ferroelectric Capacitor Memory (Shan Deng)
Paper 2: Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping (Yixin Qin)
Paper 3: Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET (Jiahui Duan)
Ppaer 4: On the Origin of Holes During Polarization Reset in Floating Body Ferroelectric FETs Towards Improving Switching Efficiency
